Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO2 stack-sensing membrane
نویسندگان
چکیده
Abstract This study demonstrated a polycrystalline-silicon (poly-Si)-based double-gate (DG) ion-sensitive field-effect transistors (DG-ISFETs) using APTES/SiO2 stack-sensing membrane. The membrane enhanced the single-gate (SG) sensitivity, and suppressed hysteresis. DG structure was preferred to have capacitive coupling effect amplify sensitivity of ISFETs. sensitivities SG- DG-ISFETs were approximately 56.8 294 mV/pH, respectively. In addition, corresponding amplifying factor 5.2. With this approach, poly-Si can be candidate for future high-performance biochemical sensing applications.
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ژورنال
عنوان ژورنال: Japanese Journal of Applied Physics
سال: 2022
ISSN: ['0021-4922', '1347-4065']
DOI: https://doi.org/10.35848/1347-4065/ac5422